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BC856...BC860
PNP Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846, BC847, BC848 BC849, BC850 (NPN)

3
2 1
VPS05161
Type BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A BC859B BC859C BC860B BC860C
Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
1
Dec-11-2001
BC856...BC860
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856 65 80 80 5 BC857 BC860 45 50 50 5 100 200 200 200 330 150 -65 ... 150 mW C BC858 BC859 30 30 30 5 mA mA V Unit
Thermal Resistance Junction - soldering point 1) RthJS
Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO
240
Values typ. max.
K/W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Unit
V 65 45 30 -
BC856 BC857/860 BC858/859
Collector-base breakdown voltage IC = 10 A, IE = 0
V(BR)CBO
BC856 BC857/860 BC858/859
80 50 30
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
Dec-11-2001
BC856...BC860
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 A, VBE = 0 BC856 BC857/860 BC858/859 Emitter-base breakdown voltage IE = 1 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 10 A, VCE = 5 V hFE -group A hFE -group B hFE -group C DC current gain 1) IC = 2 mA, VCE = 5 V hFE -group A hFE -group B hFE -group C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 600 650 750 820 VBEsat 700 850 VCEsat 75 250 300 650 hFE 125 220 420 180 290 520 250 475 800 hFE 140 250 480 ICBO 5 ICBO 15 V(BR)EBO V(BR)CES 80 50 30 5 typ. max.
Unit
V
nA A -
mV
1) Pulse test: t =300s, D = 2%
3
Dec-11-2001
BC856...BC860
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k, Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz BC 860 BC 859 BC 860 Vn 0.11 F f = 200 Hz h22e 18 30 60 1 4 h21e 200 330 600 h12e 1.5 2 3 h11e 2.7 4.5 8.7 Ceb 8 Ccb 3 fT 250 typ. max.
Unit
MHz pF
k
10-4
-
S
f = 1 kHz,
4
Dec-11-2001
dB
V
BC856...BC860
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO)
BC 856...860 EHP00376
360
mW
300 270
C CB0 ( C EB0 )
12 pF 10
P tot
240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120
8
C EBO
6
4
C CBO
2
C 150 TS
0 10 -1
5
10 0
V VCB0
10 1 (VEB0 )
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
tp D= T tp T
EHP00377
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
EHP00378
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
10 1 10 -1
5 10 0
5
10 1
mA C
10 2
5
Dec-11-2001
BC856...BC860
Collector cutoff current ICBO = f (TA) VCB = 30V
10 4 nA
EHP00381
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20
10 2
EHP00380
CB0
10 3 5 10 5 10 1 5 10 5 10 -1
0 2
C
mA 100 C 25 C -50 C
max
10 1 5
typ
10 5
0
0
50
100
C TA
150
10 -1
0
0.1
0.2
0.3
0.4
V 0.5 VCEsat
DC current gain hFE = f (IC ) VCE = 5V
10 3
EHP00382
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
10 2 mA
EHP00379
h FE 5
100 C 25 C
C
100 C 25 C -50C
10 2 5
-50 C
10 1 5
10 1 5
10 0 5
10 0 10 -2
5 10 -1
5 10 0
5 10 1
mA 10 2
10 -1
0
0.2
0.4
0.6
0.8
C
V 1.2 V BEsat
6
Dec-11-2001
BC856...BC860
h parameter he = f (IC) normalized VCE = 5V
10 2 he 5
BC 856...860 EHP00383
h parameter he = f (VCE) normalized IC = 2mA
BC 856...860 EHP00384
2.0
he
1.5
C = 2 mA
h 11
10 1 5
h 11e
VCE = 5 V
h 12e 10 0 5
1.0
h12
0.5
h 22
h 21e h 22e
10 -1 10 -1
0
5
10 0
mA
10 1
0
10
20
V VCE
30
C
Noise figure F = f (VCE ) IC = 0.2mA, RS = 2k, f = 1kHz
20 dB
BC 856...860 EHP00385
Noise figure F = f (f) IC = 0.2mA, VCE = 5V, R S = 2k
BC 856...860 EHP00386
20 dB
F
15
F
15
10
10
5
5
0 10 -1
5
10 0
5
10 1
V VCE
10 2
0 10 -2
10 -1
10 0
10 1
kHz 10 2 f
7
Dec-11-2001
BC856...BC860
Noise figure F = f (IC ) VCE = 5V, f = 120Hz
BC 856...860 EHP00387
Noise figure F = f (IC) VCE = 5V, f = 1kHz
20 dB
BC 856...860 EHP00388
20 dB
F
15 R S = 1 M 100 k 10 k
F
15 R S = 1 M 10
500
100 k
10 k
10
1 k
5 1 k
5 500
0 10 -3
10 -2
10 -1
10 0
mA 10 1
0 10 -3
10 -2
10 -1
10 0
mA 10 1
C
C
Noise figure F = f (IC ) VCE = 5V, f = 10kHz
20 dB
BC 856...860 EHP00389
F
15 R S = 1 M 100 k 10 500 10 k
5 1 k
0 10-3
10 -2
10 -1
10 0
mA 10 1
C
8
Dec-11-2001

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